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| TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Portable Equipment Applications 0.50.1 8 1.27 Unit: mm 0.40.1 5 0.05 M A * * * * * Small footprint due to small and thin package 6.00.3 High forward transfer admittance:|Yfs| = 50 S (typ.) Low leakage current: IDSS = -10 A (VDS = -60 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 5.00.2 Low drain-source ON-resistance: RDS (ON) = 11 m (typ.) 0.150.05 1 5.00.2 0.950.05 4 0.595 A 0.1660.05 S 1 0.05 S 4 1.10.2 0.60.1 Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating -60 -60 20 -40 -120 45 2.8 1.6 116 -40 4.5 150 -55~150 mJ A mJ C C W Unit V V V A 4.250.2 8 5 0.80.1 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate JEDEC JEITA TOSHIBA 2-5Q1A Drain power dissipation (Tc = 25C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25C) (Note 4) Channel temperature Storage temperature range Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 3.50.2 4 Note: For Notes 1 to 4, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPCA8104 Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc = 25C) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-c) Rth (ch-a) Rth (ch-b) Max 2.78 44.6 C/W 78.1 Unit C/W Marking (Note 5) TPCA 8104 Type Lot No. Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25C (initial), L = 0.1 mH, RG = 25 , IAR = -40 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (the last digit of the calendar year) 2 2006-11-17 TPCA8104 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs1 Qgd 0V VGS -10 V 4.7 ID = -20A Output RL = 1.5 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -60 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -20 A VGS = -10 V, ID = -20 A VDS = -10 V, ID = -20 A Min -60 -35 -0.8 25 Typ. 17 11 50 4300 450 600 10 Max 10 -10 -2.0 24 16 ns 60 nC pF Unit A A V V m S Turn-on time Switching time Fall time 20 VDD -30 V - Duty < 1%, tw = 10 s = Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge 200 90 16 28 VDD -48 V, VGS = -10 V ID = -40 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -40 A, VGS = 0 V Min Typ. Max -120 1.2 Unit A V 3 2006-11-17 TPCA8104 ID - VDS -50 -10 -8 -40 -4 -3.8 -3.6 Common source Tc = 25C Pulse test -3.2 ID - VDS -100 -10 -8 -6 -5 -4 -3.8 Common source Tc = 25C Pulse test Drain current ID (A) -3.4 -5 -30 Drain current ID (A) -6 -80 -3.6 -60 -3.4 -40 -3.2 -3 -20 -2.8 VGS = -2.6 V 0 -1 -2 -3 -4 -5 -3 -20 -2.8 -10 VGS = -2.6 V 0 0 -0.4 -0.8 0 -1.2 -1.6 -2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -100 -1.0 VDS - VGS Common source Tc = 25C Pulse test Drain current ID (A) VDS Drain-source voltage -80 VDS = -10 V Pulse test (V) -0.8 -0.6 Common source -60 ID = -40 A -0.4 -40 25 -20 100 Tc = -55C -0.2 -20 -10 0 0 -1 -2 -3 -4 -5 0 0 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID Forward transfer admittance Yfs (S) 100 100 Common source Tc = 25C Pulse test RDS (ON) - ID Tc = -55C 10 25 100 Drain-source ON-resistance RDS (ON) (m) VGS = -4 V 10 -10 1 Common source VDS = -10 V Pulse test 0.1 -0.1 -1 -10 -100 1 -1 -10 -100 Drain current ID (A) Drain currrent ID (A) 4 2006-11-17 TPCA8104 RDS (ON) - Tc 50 Common source Pulse test 40 -1000 IDR - VDS Drain-source ON-resistance RDS (ON) (m ) (A) Drain reverse current IDR -100 -5 -10 -10 -3 -1 -1 VGS = 0 V Common source Tc = 25C Pulse test 0 40 80 120 160 -0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 ID = -40 A -10 -20 ID = -10 A, -20 A, -40 A 30 20 VGS = -4 V 10 VGS = -10V 0 -80 -40 Case temperature Tc (C) Drain-source voltage VDS (V) C - VDS 10000 -2.5 Vth - Tc Gate threshold voltage Vth (V) Ciss (pF) -2.0 1000 Coss Crss 100 Common source VGS = 0 V f = 1 MHz Tc = 25C 10 -0.1 -1 -10 -100 Capacitance C -1.5 -1.0 Common source -0.5 VDS = -10 V ID = -1mA Pulse test 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Ta 3.0 (1) 2.5 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s Dynamic input/output characteristics -60 Common source -30 ID = -40 A Tc = 25C Pulse test (W) (V) -50 VDS VDD = -48 V -25 Drain power dissipation PD VDS 2.0 (2) 1.5 -40 -20 Drain-source voltage -30 -24 -20 -12 -10 VGS 0 0 20 40 60 80 100 -12 -24 VDD = -48 V -15 1.0 -10 0.5 -5 0 0 40 80 120 160 120 0 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2006-11-17 Gate-source voltage VGS (V) TPCA8104 rth - tw 1000 (1) Tc = 25C (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) rth (/W) (3) 100 (2) Transient thermal impedance 10 (1) 1 0.1 0.001 Single pulse 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -1000 50 PD - Tc (W) ID max (pulse) * -100 1 ms * ID max (continuous) * 10 ms * Drain power dissipation PD 40 30 Drain current ID (A) 20 -10 DC operation 10 0 0 40 80 120 160 -1 * Single pulse Tc = 25C Curves must be derated linearly with increase in temperature. -1 -10 Case temperature Tc(C) VDSS max -100 -0.1 -0.1 Drain-source voltage VDS (V) 6 2006-11-17 TPCA8104 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2006-11-17 |
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